Name: Vishay / Siliconix SIS612EDNT-T1-GE3
Brand: Vishay / Siliconix
SKU: SIS612EDNT-T1-GE3
Availability: InStock

Technical Specifications

Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

Product Description

The Vishay / Siliconix SIS612EDNT-T1-GE3 is a MOSFET N-CH 20V 50A PPAK1212-8S. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the Vishay / Siliconix SIS612EDNT-T1-GE3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.