Name: Vishay / Siliconix SISH536DN-T1-GE3
Brand: Vishay / Siliconix
SKU: SISH536DN-T1-GE3
Price: 0.66000 USD
Availability: InStock

Technical Specifications

Series	TrenchFET® Gen V
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	24.7A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.57W (Ta), 26.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

Product Description

The Vishay / Siliconix SISH536DN-T1-GE3 is a N-CHANNEL 30 V (D-S) MOSFET POWE. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the Vishay / Siliconix SISH536DN-T1-GE3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.