DUAL N-CHANNEL 30-V (D-S) MOSFET
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $0.9800 |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 46.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 2130pF @ 15V |
| Power - Max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerPair™ |
| Supplier Device Package | 8-PowerPair™ |
The Vishay / Siliconix SIZ998BDT-T1-GE3 is a DUAL N-CHANNEL 30-V (D-S) MOSFET. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.
Whether you need the Vishay / Siliconix SIZ998BDT-T1-GE3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.