Name: GeneSiC Semiconductor G2R1000MT17D
Brand: GeneSiC Semiconductor
SKU: G2R1000MT17D
Price: 4.86000 USD
Availability: InStock

Technical Specifications

Series	G2R™
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	139 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	53W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

Product Description

The GeneSiC Semiconductor G2R1000MT17D is a SIC MOSFET N-CH 4A TO247-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine GeneSiC Semiconductor components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the GeneSiC Semiconductor G2R1000MT17D for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.