Name: IR (Infineon Technologies) IPI072N10N3GXKSA1
Brand: IR (Infineon Technologies)
SKU: IPI072N10N3GXKSA1
Price: 1.56996 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	7.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4910 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The IR (Infineon Technologies) IPI072N10N3GXKSA1 is a MOSFET N-CH 100V 80A TO262-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine IR (Infineon Technologies) components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the IR (Infineon Technologies) IPI072N10N3GXKSA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.