Name: NXP Semiconductors 2N7000,126
Brand: NXP Semiconductors
SKU: 2N7000,126
Availability: InStock

Technical Specifications

Series	TrenchMOS™
Package	Tape & Box (TB)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	830mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Product Description

The NXP Semiconductors 2N7000,126 is a MOSFET N-CH 60V 300MA TO92-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Box (TB), Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine NXP Semiconductors components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Box (TB)
Mounting Type: Through Hole

Whether you need the NXP Semiconductors 2N7000,126 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.