Name: NXP Semiconductors PHD18NQ10T,118
Brand: NXP Semiconductors
SKU: PHD18NQ10T,118
Availability: InStock

Technical Specifications

Series	TrenchMOS™
Package	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The NXP Semiconductors PHD18NQ10T,118 is a MOSFET N-CH 100V 18A DPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine NXP Semiconductors components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the NXP Semiconductors PHD18NQ10T,118 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.