Name: Rochester Electronics IPD50N04S309ATMA1
Brand: Rochester Electronics
SKU: IPD50N04S309ATMA1
Price: 0.42000 USD
Availability: InStock

Technical Specifications

Series	OptiMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 28µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.75 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Product Description

The Rochester Electronics IPD50N04S309ATMA1 is a OPTLMOS N-CHANNEL POWER MOSFET. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Rochester Electronics IPD50N04S309ATMA1 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.