Rochester Electronics SPI21N10

MOSFET N-CH 100V 21A TO262-3

In Stock: 32,786 Genuine Part Fast Shipping
Rochester Electronics SPI21N10
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Key Specifications

Series SIPMOS®
Package Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V

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Technical Specifications

Series SIPMOS®
Package Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 44µA
Gate Charge (Qg) (Max) @ Vgs 38.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 25 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Rochester Electronics SPI21N10 is a MOSFET N-CH 100V 21A TO262-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Rochester Electronics components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Rochester Electronics SPI21N10 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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