Name: Toshiba Electronic Devices and Storage Corporation 2SJ360(F)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: 2SJ360(F)
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PW-MINI
Package / Case	TO-243AA

Product Description

The Toshiba Electronic Devices and Storage Corporation 2SJ360(F) is a MOSFET P-CH 60V 1A PW-MINI. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation 2SJ360(F) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.