Name: Toshiba Electronic Devices and Storage Corporation TK14C65W5,S1Q
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TK14C65W5,S1Q
Availability: InStock

Technical Specifications

Series	DTMOSIV
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

Product Description

The Toshiba Electronic Devices and Storage Corporation TK14C65W5,S1Q is a MOSFET N-CH 650V 13.7A I2PAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK14C65W5,S1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.