Name: Toshiba Electronic Devices and Storage Corporation TK4A60DB(STA4,Q,M)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TK4A60DB(STA4,Q,M)
Availability: InStock

Technical Specifications

Series	π-MOSVII
Package	Tube
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

Product Description

The Toshiba Electronic Devices and Storage Corporation TK4A60DB(STA4,Q,M) is a MOSFET N-CH 600V 3.7A TO220SIS. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK4A60DB(STA4,Q,M) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.