Toshiba Electronic Devices and Storage Corporation TK7A65W,S5X

MOSFET N-CH 650V 6.8A TO220SIS

In Stock: 13,517 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TK7A65W,S5X
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Key Specifications

Series DTMOSIV
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

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50+ $1.4796
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Technical Specifications

Series DTMOSIV
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 780mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 300 V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

Product Description

The Toshiba Electronic Devices and Storage Corporation TK7A65W,S5X is a MOSFET N-CH 650V 6.8A TO220SIS. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK7A65W,S5X for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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