Name: Vishay General Semiconductor – Diodes Division VS-GB100TP120N
Brand: Vishay General Semiconductor – Diodes Division
SKU: VS-GB100TP120N
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	200 A
Power - Max	650 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	7.43 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-Pak
Supplier Device Package	INT-A-PAK

Product Description

The Vishay General Semiconductor – Diodes Division VS-GB100TP120N is a IGBT MOD 1200V 200A INT-A-PAK. This component belongs to the Transistors - IGBTs - Modules category and features Package of Bulk, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Chassis Mount

Whether you need the Vishay General Semiconductor – Diodes Division VS-GB100TP120N for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.