Vishay General Semiconductor – Diodes Division VS-GB150LH120N

IGBT MOD 1200V 300A INT-A-PAK

In Stock: 13,140 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division VS-GB150LH120N
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Key Specifications

Series -
Package Bulk
Part Status Obsolete
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 300 A
Power - Max 1389 W

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Technical Specifications

Series -
Package Bulk
Part Status Obsolete
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 300 A
Power - Max 1389 W
Vce(on) (Max) @ Vge, Ic 1.87V @ 15V, 150A (Typ)
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 10.6 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Supplier Device Package Double INT-A-PAK

Product Description

The Vishay General Semiconductor – Diodes Division VS-GB150LH120N is a IGBT MOD 1200V 300A INT-A-PAK. This component belongs to the Transistors - IGBTs - Modules category and features Package of Bulk, Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Chassis Mount

Whether you need the Vishay General Semiconductor – Diodes Division VS-GB150LH120N for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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