EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2007C

EPC2007C

EPC

Description

GANFET N-CH 100V 6A DIE OUTLINE

14,912

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EPC2218

EPC2218

EPC

Description

GANFET N-CH 100V DIE

17,565

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EPC8004

EPC8004

EPC

Description

GANFET N-CH 40V 2.7A DIE

10,334

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EPC2034C

EPC2034C

EPC

Description

GANFET N-CH 200V 48A DIE

17,495

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EPC2019

EPC2019

EPC

Description

GANFET N-CH 200V 8.5A DIE

19,117

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EPC2214

EPC2214

EPC

Description

AEC-Q101 GAN FET 80V 20 MOHM

12,725

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EPC2039

EPC2039

EPC

Description

GANFET N-CH 80V 6.8A DIE

13,133

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EPC8010

EPC8010

EPC

Description

GANFET N-CH 100V 2.7A DIE

15,573

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EPC2053

EPC2053

EPC

Description

GANFET N-CH 100V 48A DIE

10,018

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EPC2212

EPC2212

EPC

Description

GANFET N-CH 100V 18A DIE

10,846

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