EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC8009

EPC8009

EPC

Description

GANFET N-CH 65V 2.7A DIE

10,417

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EPC2215

EPC2215

EPC

Description

GAN TRANS 200V 8MOHM BUMPED DIE

19,039

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EPC2034

EPC2034

EPC

Description

GANFET N-CH 200V 48A DIE

16,815

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EPC2037

EPC2037

EPC

Description

GANFET N-CH 100V 1.7A DIE

15,734

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EPC2023

EPC2023

EPC

Description

GANFET N-CH 30V 60A DIE

17,508

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EPC2045

EPC2045

EPC

Description

GANFET N-CH 100V 16A DIE

15,386

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EPC2038

EPC2038

EPC

Description

GANFET N-CH 100V 500MA DIE

18,057

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EPC2015C

EPC2015C

EPC

Description

GANFET N-CH 40V 53A DIE

17,149

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EPC2216

EPC2216

EPC

Description

GANFET N-CH 15V 3.4A DIE

15,387

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EPC2024

EPC2024

EPC

Description

GANFET NCH 40V 60A DIE

17,389

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