EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2030

EPC2030

EPC

Description

GANFET NCH 40V 31A DIE

17,831

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EPC2016C

EPC2016C

EPC

Description

GANFET N-CH 100V 18A DIE

13,097

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EPC2202

EPC2202

EPC

Description

GANFET N-CH 80V 18A DIE

10,706

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EPC2207

EPC2207

EPC

Description

TRANS GAN 200V DIE .022OHM

10,214

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EPC2219

EPC2219

EPC

Description

TRANS GAN 65V AECQ101 3.3OHM DIE

15,445

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EPC2033

EPC2033

EPC

Description

GANFET N-CH 150V 31A DIE

16,901

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EPC2206

EPC2206

EPC

Description

GANFET N-CH 80V 90A DIE

18,740

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EPC2105

EPC2105

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

17,945

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EPC2107

EPC2107

EPC

Description

GANFET 3 N-CH 100V 9BGA

15,826

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EPC2102ENGRT

EPC2102ENGRT

EPC

Description

GANFET 2 N-CHANNEL 60V 23A DIE

17,696

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