EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2052

EPC2052

EPC

Description

GANFET N-CH 100V 8.2A DIE

12,063

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EPC2031

EPC2031

EPC

Description

GANFET NCH 60V 31A DIE

18,428

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EPC2051

EPC2051

EPC

Description

GANFET N-CH 100V 1.7A DIE

15,388

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EPC2010C

EPC2010C

EPC

Description

GANFET N-CH 200V 22A DIE OUTLINE

18,591

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EPC2035

EPC2035

EPC

Description

GANFET N-CH 60V 1A DIE

21,600

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EPC2022

EPC2022

EPC

Description

GANFET N-CH 100V 60A DIE

17,066

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EPC2032

EPC2032

EPC

Description

GANFET N-CH 100V 48A DIE

18,125

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EPC2029

EPC2029

EPC

Description

GANFET N-CH 80V 48A DIE

18,311

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EPC2040

EPC2040

EPC

Description

GANFET NCH 15V 3.4A DIE

18,149

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EPC2014C

EPC2014C

EPC

Description

GANFET N-CH 40V 10A DIE OUTLINE

13,306

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