EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC8002

EPC8002

EPC

Description

GANFET N-CH 65V 2A DIE

11,001

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EPC2059

EPC2059

EPC

Description

TRANS GAN 170V DIE .009OHM

19,547

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EPC2021

EPC2021

EPC

Description

GANFET N-CH 80V 90A DIE

17,121

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EPC2012C

EPC2012C

EPC

Description

GANFET N-CH 200V 5A DIE OUTLINE

11,683

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EPC2001C

EPC2001C

EPC

Description

GANFET N-CH 100V 36A DIE OUTLINE

17,282

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EPC2055

EPC2055

EPC

Description

GANFET N-CH 40V 29A DIE

12,098

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EPC2020

EPC2020

EPC

Description

GANFET N-CH 60V 90A DIE

17,344

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EPC2036

EPC2036

EPC

Description

GANFET N-CH 100V 1.7A DIE

24,722

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EPC2204

EPC2204

EPC

Description

TRANS GAN 100V DIE 5.6MOHM

12,977

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EPC2203

EPC2203

EPC

Description

GANFET N-CH 80V 1.7A DIE

22,973

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