EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2100

EPC2100

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

18,020

More on Order<

EPC2152ENGRT

EPC2152ENGRT

EPC

Description

IC GANFET HALFBRIDG/DRIVER 12LGA

16,085

More on Order<

EPC21601ENGRT

EPC21601ENGRT

EPC

Description

IC LASER DRVR 40V 10A 3.3V 6BMPD

10,495

More on Order<

EPC21603ENGRT

EPC21603ENGRT

EPC

Description

IC LASER DRVR 40V 10A LVDS 6BMPD

10,521

More on Order<

EPC2016

EPC2016

EPC

Description

GANFET N-CH 100V 11A DIE

15,068

More on Order<

EPC2001

EPC2001

EPC

Description

GANFET N-CH 100V 25A DIE OUTLINE

15,613

More on Order<

EPC2012

EPC2012

EPC

Description

GANFET N-CH 200V 3A DIE

16,096

More on Order<

EPC2015

EPC2015

EPC

Description

GANFET N-CH 40V 33A DIE OUTLINE

15,170

More on Order<

EPC2014

EPC2014

EPC

Description

GANFET N-CH 40V 10A DIE OUTLINE

16,641

More on Order<

EPC2010

EPC2010

EPC

Description

GANFET N-CH 200V 12A DIE

15,228

More on Order<

Top