EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2103

EPC2103

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

17,930

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EPC2104

EPC2104

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

17,953

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EPC2106

EPC2106

EPC

Description

GANFET TRANS SYM 100V BUMPED DIE

11,981

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EPC2102

EPC2102

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

17,126

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EPC2108

EPC2108

EPC

Description

GANFET 3 N-CH 60V/100V 9BGA

11,347

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EPC2100ENGRT

EPC2100ENGRT

EPC

Description

GANFET 2 N-CH 30V 9.5A/38A DIE

10,506

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EPC2101

EPC2101

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

17,917

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EPC2110ENGRT

EPC2110ENGRT

EPC

Description

GAN TRANS 2N-CH 120V BUMPED DIE

13,542

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EPC2110

EPC2110

EPC

Description

GANFET 2NCH 120V 3.4A DIE

13,634

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EPC2111

EPC2111

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

10,322

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