EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2049ENGRT

EPC2049ENGRT

EPC

Description

GANFET N-CH 40V 16A DIE

16,407

More on Order<

EPC2007

EPC2007

EPC

Description

GANFET N-CH 100V 6A DIE OUTLINE

15,528

More on Order<

EPC2018

EPC2018

EPC

Description

GANFET N-CH 150V 12A DIE

15,175

More on Order<

EPC2031ENGRT

EPC2031ENGRT

EPC

Description

GANFET NCH 60V 31A DIE

16,536

More on Order<

EPC2030ENGRT

EPC2030ENGRT

EPC

Description

GANFET NCH 40V 31A DIE

14,734

More on Order<

EPC2106ENGRT

EPC2106ENGRT

EPC

Description

GAN TRANS 2N-CH 100V BUMPED DIE

14,569

More on Order<

EPC2105ENGRT

EPC2105ENGRT

EPC

Description

GANFET 2NCH 80V 9.5A DIE

15,068

More on Order<

EPC2104ENGRT

EPC2104ENGRT

EPC

Description

GANFET 2NCH 100V 23A DIE

14,246

More on Order<

EPC2101ENGRT

EPC2101ENGRT

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

15,774

More on Order<

EPC2103ENGRT

EPC2103ENGRT

EPC

Description

GANFET TRANS SYM HALF BRDG 80V

16,827

More on Order<

Top